DocumentCode :
1922911
Title :
Electrical Characteristics of Gd2O3 Thin Film Deposited on Si Substrate
Author :
Ohshima, Chizuru ; Kashiwag, I. ; Ohmi, Shun-ichiro ; Iwai, Hiroshi
Author_Institution :
Tokyo Institute of Technology, Yokohama-shi, Japan
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
415
Lastpage :
418
Keywords :
Amorphous materials; Annealing; Chemicals; Dielectric materials; Dielectric substrates; Electric variables; Semiconductor films; Semiconductor thin films; Sputtering; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194956
Filename :
1503886
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1922911
بازگشت