DocumentCode :
1922927
Title :
ZrO2 Gate Dielectrics Prepared by E-beam Deposition of Zr and YSZ Films and Post Annealing Processes
Author :
Johansson, M. ; Yousif, M.Y.A. ; Sareen, A. ; Lundgren, P. ; Bengtsson, S. ; Södervall, U.
Author_Institution :
Solid State Electronics, Chalmer Univ, Sweden, Sweden
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
419
Lastpage :
422
Keywords :
Annealing; Dielectrics; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194957
Filename :
1503887
Link To Document :
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