DocumentCode
1922927
Title
ZrO2 Gate Dielectrics Prepared by E-beam Deposition of Zr and YSZ Films and Post Annealing Processes
Author
Johansson, M. ; Yousif, M.Y.A. ; Sareen, A. ; Lundgren, P. ; Bengtsson, S. ; Södervall, U.
Author_Institution
Solid State Electronics, Chalmer Univ, Sweden, Sweden
fYear
2002
fDate
24-26 September 2002
Firstpage
419
Lastpage
422
Keywords
Annealing; Dielectrics; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194957
Filename
1503887
Link To Document