Characteristics of HfO2 pMOSFET with Ultrashallow Junction Prepared by Plasma Doping and Laser Annealing

Author

Baek, Sungkweon ; Heo, Sungho ; Hwang, Hyunsang

Author_Institution

Kwangju Institute of Science and Technology, Korea (South)

fYear

2002

fDate

24-26 September 2002

Firstpage

423

Lastpage

426

Keywords

Annealing; Doping; Hafnium oxide; MOSFET circuits; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194958

Filename

1503888

Link To Document