Title :
Theory of exciton dephasing in single quantum dots
Author :
Takaghara, T. ; Wang, Huifang
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
Abstract :
Summary form only given.A theoretical model is presented to describe the magnitude as well as the temperature dependence of the dephasing rate generalising the Huang-Rhys theory of F-centers to include mixing of excited exciton states through exciton-phonon interactions.
Keywords :
carrier density; excitons; semiconductor device models; semiconductor quantum dots; F-centers; Huang-Rhys theory; dephasing rate; excited exciton state mixing; exciton-phonon interactions; single quantum dot exciton dephasing; temperature dependence; theoretical model; Charge carrier density; Excitons; Optical scattering; Particle scattering; Plasma properties; Plasma temperature; Quantum dots; Quantum mechanics; US Department of Transportation; Zinc compounds;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680123
