DocumentCode
1922972
Title
Theory of exciton dephasing in single quantum dots
Author
Takaghara, T. ; Wang, Huifang
Author_Institution
NTT Basic Res. Labs., Kanagawa, Japan
fYear
1998
fDate
8-8 May 1998
Firstpage
58
Lastpage
59
Abstract
Summary form only given.A theoretical model is presented to describe the magnitude as well as the temperature dependence of the dephasing rate generalising the Huang-Rhys theory of F-centers to include mixing of excited exciton states through exciton-phonon interactions.
Keywords
carrier density; excitons; semiconductor device models; semiconductor quantum dots; F-centers; Huang-Rhys theory; dephasing rate; excited exciton state mixing; exciton-phonon interactions; single quantum dot exciton dephasing; temperature dependence; theoretical model; Charge carrier density; Excitons; Optical scattering; Particle scattering; Plasma properties; Plasma temperature; Quantum dots; Quantum mechanics; US Department of Transportation; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-541-2
Type
conf
DOI
10.1109/IQEC.1998.680123
Filename
680123
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