Title :
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
Author :
Landi, G. ; Fahrner, W.R. ; Concilio, S. ; Sessa, L. ; Neitzert, H.C.
Author_Institution :
Fac. of Math. & Comput. Sci., Fernuniv. Hagen, Hagen, Germany
Abstract :
In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters.
Keywords :
capacitance; carrier mobility; elemental semiconductors; organic semiconductors; permittivity; semiconductor heterojunctions; semiconductor thin films; silicon; zinc; Si; Zn; ambipolar organic compound; bridging Zn-atom; capacitance voltage measurements; crystalline silicon heterostructure; current-voltage characteristics; electrical hole transport properties; electron conducting molecule; hole conducting molecule; hole conduction parameter; n-type crystalline silicon substrate; organic layer dielectric parameter; organic-inorganic heterostructure; thin organic film; Capacitance-voltage characteristics; Charge carrier mobility; Crystalline materials; Dielectric constant; Electron traps; Silicon; Organic/inorganic heterodiode; capacitance-voltage measurement spectroscopy; charge carrier mobility; dielectric constant; electronic energy levels;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2014.2346584
