Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure

Author

Landi, G. ; Fahrner, W.R. ; Concilio, S. ; Sessa, L. ; Neitzert, H.C.

Author_Institution

Fac. of Math. & Comput. Sci., Fernuniv. Hagen, Hagen, Germany

Volume

2

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

179

Lastpage

181

Abstract

In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters.

Keywords

capacitance; carrier mobility; elemental semiconductors; organic semiconductors; permittivity; semiconductor heterojunctions; semiconductor thin films; silicon; zinc; Si; Zn; ambipolar organic compound; bridging Zn-atom; capacitance voltage measurements; crystalline silicon heterostructure; current-voltage characteristics; electrical hole transport properties; electron conducting molecule; hole conducting molecule; hole conduction parameter; n-type crystalline silicon substrate; organic layer dielectric parameter; organic-inorganic heterostructure; thin organic film; Capacitance-voltage characteristics; Charge carrier mobility; Crystalline materials; Dielectric constant; Electron traps; Silicon; Organic/inorganic heterodiode; capacitance-voltage measurement spectroscopy; charge carrier mobility; dielectric constant; electronic energy levels;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2346584

Filename

6874478