DocumentCode :
1923020
Title :
Pure and modified lead titanate thin films by sol-gel
Author :
Tahan, D.M. ; Safari, A.
Author_Institution :
Dept. of Ceramic Sci. & Eng., Rutgers State Univ. of New Jersey, Piscataway, NJ, USA
fYear :
1992
fDate :
30 Aug-2 Sep 1992
Firstpage :
420
Lastpage :
423
Abstract :
Pure and modified lead titanate thin films were fabricated by spin coating an alkoxide-based solution onto platinum-coated silicon substrates. The solution was made by combining lead acetate trihydrate, titanium IV isopropoxide, and diethanolamine in isopropanol with lanthanum as a dopant. Various heating schedules and techniques were examined to optimize the dielectric and microstructural properties of the films. The films were tested for dielectric and hysteresis properties, and characterized by various methods. Perovskite PbTiO3 was found to form at approximately 400°C and could be obtained by heating for short soaking durations of 10 min per layer. Measured at 1 kHz, an average dielectric constant of 410 was obtained for pure lead titanate films heated at 500°C for 1 h. Hysteresis measurements taken on these films at 100 Hz revealed an average remanent polarization of 11 μC/cm2 with a coercive field of approximately 75 kV/cm. The films doped with 5% lanthanum exhibited a dielectric constant of 825 with a coercive field of 52 kV/cm and a remanent polarization of 25 μC/cm2
Keywords :
X-ray diffraction examination of materials; ceramics; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; sol-gel processing; 400 to 600 degC; PbTiO3 thin films; Si substrates; X-ray diffraction; coercive field; dielectric constant; ferroelectric thin films; microstructural properties; perovskite structure; remanent polarization; spin coating; Dielectric constant; Dielectric measurements; Dielectric substrates; Dielectric thin films; Heating; Hysteresis; Lanthanum; Polarization; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
Type :
conf
DOI :
10.1109/ISAF.1992.300727
Filename :
300727
Link To Document :
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