Title :
Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs
Author_Institution :
MESA+ Inst., Twente Univ., Enschede
Abstract :
This paper introduces large signal excitation measurement techniques to analyze random telegraph signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor
Keywords :
MOSFET; hole traps; random noise; semiconductor device noise; MOSFET; RTS noise; bias situation; noise generation; oxide traps; random telegraph signal; signal excitation; transistor OFF-state; trap occupancy; Circuit noise; Electron traps; Fluctuations; Frequency; History; Low-frequency noise; MOSFETs; Measurement techniques; Semiconductor device noise; Telegraphy; LF noise; Large Signal Excitation; MOSFET; Random Telegraph Signal (RTS) noise; Transient;
Conference_Titel :
Computer as a Tool, 2005. EUROCON 2005.The International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0049-X
DOI :
10.1109/EURCON.2005.1630344
