Transmission line noise from standard and proton-implanted Si

Author

Chan, K.T. ; Chin, A. ; Kwei, C.M. ; Shien, D.T. ; Lin, J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

763

Abstract

We have measured the NF/sub min/ of transmission lines on 10/sup 6/ ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Transmission lines on proton implanted Si shows the lowest NF/sub min/ of less than 0.2 dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carrier trapping and de-trapping because of the very small diffusion length to metal line.

Keywords

MOSFET; UHF field effect transistors; electron traps; elemental semiconductors; hydrogen; ion implantation; microwave field effect transistors; semiconductor device noise; shot noise; silicon; 0.2 dB; 1E6 ohmcm; MOSFETs; Si:H; carrier trapping; de-trapping; diffusion length; excess shot noise; proton-implanted structures; resistivity; substrate loss; top isolation oxide; transmission line noise; Conductivity; Measurement standards; Noise figure; Noise generators; Noise measurement; Power transmission lines; Protons; Radio frequency; Transmission line measurements; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967004

Filename

967004