Title :
Temperature Dependence of the Hard Breakdown Current of MOS Capacitors
Author :
Avellán, Alejandro ; Miranda, Enrique ; Sell, B. ; Schroeder, Dietmar ; Krautschneider, Wolfgang
Author_Institution :
Technical University, Hamburg-Harburg, Germany
fDate :
24-26 September 2002
Keywords :
Breakdown voltage; Circuit simulation; Electric breakdown; Electrodes; Low voltage; MOS capacitors; MOS devices; Semiconductor device doping; Substrates; Temperature dependence;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194968
