Title :
A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM
Author :
Zhang, Shengdong ; Zhang, Zhikuan ; Lin, Xinnan ; Han, Ruqi ; Ko, PingK ; Chan, Mansun
Author_Institution :
Dept. of EEE, HKUST, Hong Kong, China
fDate :
24-26 September 2002
Keywords :
Annealing; Boron; Crystallization; Current measurement; Ion implantation; Low voltage; MOSFET circuits; Partial response channels; Random access memory; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194969
