BiCMOS, a technology for high-speed/high-density ICs

Author

Klose, H. ; Zehner, B. ; Wieder, A.

Author_Institution

Siemens AG, Munich, West Germany

fYear

1989

fDate

2-4 Oct 1989

Firstpage

304

Lastpage

309

Abstract

A BiCMOS technology for high-speed/high-density circuits for digital and analog functions is described. The features of MOS and bipolar devices are compared. The different aspects of designing a BiCMOS process are described. The advantages of the BiCMOS technology for systems applications are demonstrated. The results clearly show that BiCMOS is the choice for filling the gap between pure CMOS and pure bipolar technology. BiCMOS overcomes the power dissipation and packing density problems of large bipolar circuits and the speed limitation problem of large CMOS circuits. It is shown that the speed advantage of BiCMOS over CMOS is a factor of 4-5 for mixed ECL/CMOS designs and up to a factor of 8 for those analog circuits which require both speed and precision

Keywords

BIMOS integrated circuits; VLSI; integrated circuit technology; integrated logic circuits; integrated memory circuits; linear integrated circuits; BiCMOS technology; analog circuits; analog functions; digital functions; high-speed/high-density circuits; mixed ECL/CMOS designs; packing density; power dissipation; speed advantage; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitance; Costs; Delay; Energy consumption; Hip; Voltage; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on

Conference_Location

Cambridge, MA

Print_ISBN

0-8186-1971-6

Type

conf

DOI

10.1109/ICCD.1989.63377

Filename

63377