Application of InAs quantum dots for high-speed photodiodes in fiber optics

Author

Umezawa, Toshimasa ; Akahane, Kouichi ; Kanno, Atsushi ; Kawanishi, Tetsuyas

Author_Institution

Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan

fYear

2013

fDate

12-16 May 2013

Firstpage

1

Lastpage

1

Abstract

We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

Keywords

III-V semiconductors; avalanche breakdown; avalanche photodiodes; gallium arsenide; indium compounds; optical fibres; p-i-n photodiodes; photoconductivity; semiconductor quantum dots; I-V curves; InAs-InAsGaAs; PIN photodiode; PIN structure; avalanche multiplication; avalanche photodiodes; cutoff frequency; fiber optics; high-speed photodiodes; multiplication structure; photovoltaic efficiency; quantum-dot absorption layer; separated absorption structure; solar cells; Absorption; Cutoff frequency; Dark current; Indium compounds; Photodiodes; Quantum dots; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference

Conference_Location

Munich

Print_ISBN

978-1-4799-0593-5

Type

conf

DOI

10.1109/CLEOE-IQEC.2013.6801253

Filename

6801253