Title :
Application of InAs quantum dots for high-speed photodiodes in fiber optics
Author :
Umezawa, Toshimasa ; Akahane, Kouichi ; Kanno, Atsushi ; Kawanishi, Tetsuyas
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
Abstract :
We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.
Keywords :
III-V semiconductors; avalanche breakdown; avalanche photodiodes; gallium arsenide; indium compounds; optical fibres; p-i-n photodiodes; photoconductivity; semiconductor quantum dots; I-V curves; InAs-InAsGaAs; PIN photodiode; PIN structure; avalanche multiplication; avalanche photodiodes; cutoff frequency; fiber optics; high-speed photodiodes; multiplication structure; photovoltaic efficiency; quantum-dot absorption layer; separated absorption structure; solar cells; Absorption; Cutoff frequency; Dark current; Indium compounds; Photodiodes; Quantum dots; Substrates;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6801253
