Title :
A 1 W CMOS power amplifier for GSM-1800 with 55% PAE
Author :
Fallesen, C. ; Asbeck, P.
Author_Institution :
Nokia Denmark, Copenhagen, Denmark
Abstract :
Until recently it was the common opinion that CMOS RF power amplifiers were not feasible for mobile handsets. This paper presents a CMOS power amplifier for the GSM-1800 standard, with only two external matching components and a few decoupling capacitors. The performance of the power amplifier is better than any other CMOS power amplifier reported and comparable to commercially available power amplifiers in other technologies.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; power integrated circuits; telephone sets; transceivers; 0.35 micron; 1 W; 1 to 3.4 V; 1710 to 1785 MHz; 55 percent; CMOS power amplifier; GSM-1800 standard; RF power amplifiers; decoupling capacitors; external matching components; mobile handsets; Breakdown voltage; CMOS process; Capacitors; Costs; High power amplifiers; Mobile handsets; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967039
