Title :
Two temperature sensors realized in BiCMOS technology
Author :
Filanovsky, I.M.
Author_Institution :
Alberta Univ., Edmonton, Alta., Canada
fDate :
31 May-3 Jun 1998
Abstract :
The first sensor uses, as a temperature sensitive element, a threshold extractor circuit. The output of this circuit provides the p-channel transistor threshold voltage that linearly changes with temperature. The second sensor uses a bridge that includes polysilicon and base-diffused resistors. A one-stage operational amplifier amplifies the output voltage of the sensors. The temperature simulation of the sensor circuits shows that the circuit with extractor has a more linear temperature characteristic than the circuit with the bridge
Keywords :
BiCMOS analogue integrated circuits; bridge circuits; operational amplifiers; temperature sensors; BiCMOS technology; base-diffused resistors; linear temperature characteristic; one-stage operational amplifier; p-channel transistor threshold voltage; polysilicon resistors; temperature sensitive element; temperature sensors; temperature simulation; threshold extractor; BiCMOS integrated circuits; Bridge circuits; Circuit simulation; Equations; Integrated circuit technology; Sensor phenomena and characterization; Temperature measurement; Temperature sensors; Thermal sensors; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.705351
