Variable gain power amplifier for mobile WCDMA applications

Author

Vintola, V. ; Matilainen, M. ; Kalajo, S. ; Jarvinen, E.

Author_Institution

Nokia Mobile Phones, Helsinki, Finland

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

919

Abstract

A single chip linear power amplifier (PA) with >48 dB gain control range and >24 dBm output power with adjacent channel leakage power (ACP) figures below -36 dBc is presented. The chip is realized using an AlGaAs-GaAs HBT process and is aimed at 1.95 GHz mobile WCDMA applications. The amplifier consists of two blocks, the variable gain amplifier and the power amplifier; The chip size is 1.3/spl times/1.1 mm/sup 2/ and it is mounted on a 8/spl times/8 mm FR-4 type laminate with 26 pieces of 0402 SMD components composing a complete 50 /spl Omega/ input-output amplifier module. This paper presents the design of the two blocks, discusses issues related to the combining and finally presents the complete amplifier realization and measurement results.

Keywords

III-V semiconductors; UHF integrated circuits; UHF power amplifiers; aluminium compounds; bipolar analogue integrated circuits; code division multiple access; gain control; gallium arsenide; heterojunction bipolar transistors; mobile radio; modules; 1.95 GHz; 27 to 39 percent; ACP figures; AlGaAs-GaAs; AlGaAs-GaAs HBT process; SMD components; VGA block; adjacent channel leakage power; amplifier module; mobile WCDMA applications; power amplifier; single chip linear power amplifier; variable gain power amplifier; Circuits; GSM; Gain control; Laminates; Multiaccess communication; Power amplifiers; Radiofrequency amplifiers; Temperature; Topology; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967041

Filename

967041