Title :
Microwave Performance of HFETs on Metamorphic In0.7Al0.3As/In0.8Ga0.2As on GaAs Substrates
Author :
Karlsson, Christer ; Rorsman, Niklas ; Wang, Shumin ; Olsson, Eva ; Andersson, Thorvald G. ; Zirath, Herbert
Author_Institution :
Department of Microwave Technology,Chalmers University of Technology S-412 96 Göteborg Sweden
Abstract :
Heterostructure Field-Effect Transistors (HFETs) on In0.7Al0.3As/ In0.8Ga0.2As heterostructures grown on GaAs substrates have been fabricated and characterized. The lattice mismatch is accommodated by a linearly graded InxAlyGa1-x-yAs buffer. The Hall mobility is 9700 and 39400 cm2/Vs at room temperature and 77 K, respectively. An intrinsic transit frequency, fT, of 250 GHz indicates high electron velocity in the In0.8Ga0.2As channel. This is, to our knowledge, the highest fT obtained for an InxGa1-xAs HFET with x≫0.5 on GaAs substrates.
Keywords :
Atomic force microscopy; Gallium arsenide; HEMTs; Hall effect; Lattices; MODFETs; Microwave technology; Substrates; Temperature; Transmission electron microscopy;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
