Title :
RF LDMOS characterization and its compact modeling
Author :
Jaejune Jang ; Tornblad, O. ; Arnborg, T. ; Qiang Chen ; Banerjee, K. ; Zhiping Yu ; Dutton, R.W.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
This paper presents characterization of power LDMOS using device simulation and analytical modeling. Features of the LDMOS such as graded channel and quasi-saturation effect which result in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using device simulation. A compact model for LDMOS is implemented in HSPICE based on additional lumped elements, combined with the BSIM3 MOSFET model.
Keywords :
MOSFET; SPICE; UHF field effect transistors; digital simulation; microwave field effect transistors; semiconductor device models; BSIM3 MOSFET model; HSPICE; RF LDMOS characterization; analytical modeling; compact modeling; device simulation; graded channel; lumped elements; nonlinear LDD resistance; power LDMOS; quasi-saturation effect; Analytical models; Circuit simulation; Fabrication; High power amplifiers; MOSFET circuits; Microelectronics; Radio frequency; Radiofrequency amplifiers; Semiconductor process modeling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967053
