Title :
Reliable Complementary HIGFET Technology for High Speed/Low Power Applications
Author :
Fawaz, Hussein ; Thiery, Jean-Francois ; Nluyen, Linh ; Delos, Elisabet ; Salmer, Georges
Author_Institution :
Institut D´´Electronique et de Microelectronique du Nord (IEMN), Avenue Poincaré, B.P. 69, 59652 Villeneuve d´´Ascq, FRANCE
Abstract :
A self aligned complementary HIGFET technology has been developed for high speed/low power digital applications. The process uses 9 lithographic steps including two level of interconnect metal. Typical transconductances of 290 mS/mm and 65 mS/mm are acheived on 1pm gate length N and P-channel devices respectively. These devices show promisefor incorporation in complementary digtal circuits.
Keywords :
Circuits; Current measurement; Gallium arsenide; Gold; Implants; Lithography; Ohmic contacts; Performance evaluation; Transistors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
