Title :
Effects of N2O-anneal Induced Nitrogen Residue at LOCOS Isolation Edges on Dielectric Breakdown of Regrown Oxides
Author :
Peng, Nai Chen ; Huang, Chimoon ; Chao, M. ; Sung, K.T. ; Chang, Y.
Author_Institution :
Macronix International Co., LTD, Hsin-Chu, Taiwan, R. O. C. TEL : 886-35-788888 FAX : 886-35-788886
Keywords :
Annealing; Capacitors; Degradation; Dielectric breakdown; EPROM; Leakage current; Nitrogen; Nonvolatile memory; Oxidation; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
