Effects of N2O-anneal Induced Nitrogen Residue at LOCOS Isolation Edges on Dielectric Breakdown of Regrown Oxides

Author

Peng, Nai Chen ; Huang, Chimoon ; Chao, M. ; Sung, K.T. ; Chang, Y.

Author_Institution

Macronix International Co., LTD, Hsin-Chu, Taiwan, R. O. C. TEL : 886-35-788888 FAX : 886-35-788886

fYear

1995

fDate

25-27 Sept. 1995

Firstpage

243

Lastpage

246

Keywords

Annealing; Capacitors; Degradation; Dielectric breakdown; EPROM; Leakage current; Nitrogen; Nonvolatile memory; Oxidation; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Conference_Location

The Hague, The Netherlands

Print_ISBN

286332182X

Type

Filename

5435954

Link To Document