DocumentCode
1924471
Title
Physical Modelling of Thin Base n-p-n Bipolar Transistor with Contact Silicidation
Author
Fornara, P. ; Denorme, S. ; de Berranger, E. ; Poncet, A. ; Mouis, M.
Author_Institution
GRESSI, France Telecom, CNET, BP 98, 38243 Meylan Cedex, France
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
199
Lastpage
202
Abstract
The aim of this paper is to investigate the influence of the SALICIDE (Self Aligned Silicide) process on thin base n-p-n bipolar transistor by means of numerical simulation. Process simulations using advanced physical models of silicide formation have been carried out. They show the effect of injected vacancies on dopant redistribution during silicidation. Device simulation has then been used to evaluate the influence of this redistribution on the electrical characteristics of this thin base n-p-n bipolar transistor.
Keywords
Analytical models; Bipolar transistors; Boron; Doping profiles; Semiconductor device modeling; Semiconductor process modeling; Silicidation; Silicon; Simulated annealing; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435967
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