Title :
Mechanical Stress Analysis of a LDD-MOSFET Structure
Author :
Ferreira, P. ; Senez, V. ; Baccus, B.
Author_Institution :
IEMN, dépt. ISEN, 41 boulevard Vauban, 59046 Lille cedex, France
Abstract :
A mechanical stress analysis of the LDD-MOSFET structure is presented. It includes the cumulative effects from the oxidation, the thermal cycles and the intrinsic stresses, and uses a non-linear viscoelastic model. A calibration of the rheological properties is also proposed for APCVD doped oxides.
Keywords :
Calibration; Dielectric substrates; Mechanical factors; Oxidation; Residual stresses; Silicon; Stress measurement; Temperature; Thermal stresses; Viscosity;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
