• DocumentCode
    1924601
  • Title

    Mechanical Stress Analysis of a LDD-MOSFET Structure

  • Author

    Ferreira, P. ; Senez, V. ; Baccus, B.

  • Author_Institution
    IEMN, dépt. ISEN, 41 boulevard Vauban, 59046 Lille cedex, France
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    A mechanical stress analysis of the LDD-MOSFET structure is presented. It includes the cumulative effects from the oxidation, the thermal cycles and the intrinsic stresses, and uses a non-linear viscoelastic model. A calibration of the rheological properties is also proposed for APCVD doped oxides.
  • Keywords
    Calibration; Dielectric substrates; Mechanical factors; Oxidation; Residual stresses; Silicon; Stress measurement; Temperature; Thermal stresses; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1924601