New design method of non-uniform distributed power amplifiers. Application to a single stage 1 W PHEMT MMIC

Author

Duperrier, C. ; Campovecchio, M. ; Roussel, L. ; Lajugie, M. ; Quere, R.

Author_Institution

Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

1063

Abstract

A new design methodology of non-uniform distributed power amplifiers is reported in this paper. This method is based on analytical expressions of the optimum input and output artificial lines making up the non-uniform distributed power amplifier. These relationships are based on the optimum load line requirement for power operation. To validate the proposed design methodology, a non-uniform distributed power amplifier has been manufactured at the TriQuint Semiconductor foundry using a 0.25 /spl mu/m power PHEMT process. This single stage MMIC amplifier is made of six non-uniform cells and demonstrates 1 W output power with 7 dB associated gain and 20% PAE over multi-octave bandwidth.

Keywords

HEMT integrated circuits; MMIC power amplifiers; distributed amplifiers; field effect MMIC; integrated circuit design; wideband amplifiers; 0.25 micron; 1 W; 20 percent; 7 dB; PHEMT MMIC; TriQuint Semiconductor foundry; design methodology; input artificial lines; multi-octave bandwidth; nonuniform distributed power amplifiers; optimum load line requirement; output artificial lines; output power; Design methodology; Distributed amplifiers; Foundries; MMICs; Manufacturing processes; PHEMTs; Power amplifiers; Power generation; Semiconductor device manufacture; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967075

Filename

967075