Title :
Active voltage control of SiC-SIT circuit breakers for overvoltage suppression
Author :
Bao Cong Hiu ; Saito, Takashi ; Sato, Yuuki ; Tanaka, Yuichi ; Takatsuka, Akio ; Matsumoto, Akiyoshi
Author_Institution :
Chiba Univ., Chiba, Japan
Abstract :
400V DC distribution systems have attracted much attention recently as the next generation power distribution systems for data centers. For the reliability of these networks, the development of high speed DC circuit breaker for overcurrent protection is essential. In existing research, semiconductor DC circuit breakers using silicon carbide static induction transistors (SiC-SITs) show to be a promising candidate as these high speed DC circuit breakers. In this case, the overvoltage generated across the drain-source terminals of the SiC-SIT device during the turn-off process is highly dependent on the applied turn-off gate-source voltage and the variation in characteristic of the devices. In this paper, the active voltage control method is proposed to suppress the overvoltage to a predetermined range even when variation in characteristic of the devices exists. The effectiveness of the proposed method is demonstrated by experiments.
Keywords :
circuit breakers; computer centres; overvoltage protection; power distribution reliability; power transistors; silicon compounds; static induction transistors; voltage control; wide band gap semiconductors; DC distribution systems; SiC; active voltage control method; data centers; drain-source terminals; high-speed DC circuit breaker; network reliability; next generation power distribution systems; overcurrent protection; overvoltage suppression; semiconductor DC circuit breakers; silicon carbide static induction transistors; silicon carbide-SIT circuit breakers; turn-off gate-source voltage; turn-off process; voltage 400 V; Automatic voltage control; Circuit breakers; Interrupters; Logic gates; Oscillators; Switches;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6646873