Title :
Proceedings of the 14th International Symposium on Power Semiconductor Devices and ICs (Cat. No.02CH37306)
Abstract :
The following topics are dealt with: low voltage devices; high voltage devices; SiC devices; SOI power devices; smart power ICs; superjunction device technology; packaging technology and termination structures; safe operating area and substrate isolation; IGBTs; lateral power MOSFETs.
Keywords :
insulated gate bipolar transistors; integrated circuit packaging; isolation technology; low-power electronics; power MOSFET; power bipolar transistors; power integrated circuits; semiconductor device packaging; silicon-on-insulator; IGBT; SOI power devices; Si-SiO/sub 2/; SiC; SiC devices; high voltage devices; lateral power MOSFET; low voltage devices; packaging technology; power semiconductor IC; power semiconductor devices; safe operating area; smart power IC; substrate isolation; superjunction device technology; termination structures; Insulated gate bipolar transistors; Integrated circuit packaging; Isolation technology; Power MOSFETs; Power bipolar transistors; Power integrated circuits; Semiconductor device packaging; Silicon on insulator technology;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Conference_Location :
Sante Fe, NM, USA
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016158
