Title :
Safe operating area - a new frontier in Ldmos design
Author :
Hower, Philip L.
Author_Institution :
Mixed Signal Technol. Dev., Texas Instruments, Manchester, NH, USA
Abstract :
The boundaries that determine the Ldmos safe operating area are described and are shown to be predominantly thermal or electrical in origin. Methods of characterizing and analyzing the related thermal SOA and electrical SOA are illustrated. The impact on device size and related trade-offs with breakdown voltage and specific on-resistance are discussed, as are possibilities for improving SOA performance.
Keywords :
CMOS integrated circuits; electric resistance; integrated circuit design; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device reliability; CMOS technology; LDMOS design; SOA performance; breakdown voltage; device size; electrical SOA; safe operating area; specific on-resistance; thermal SOA; CMOS technology; Driver circuits; Information processing; Instruments; Lighting control; Power semiconductor devices; Power system relaying; Semiconductor optical amplifiers; Silicon; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016159
