Title :
Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV
Author :
Rahimo, M. ; Kopta, A. ; Eicher, S. ; Kaminski, N. ; Bauer, F. ; Schlapbach, U. ; Linder, S.
Author_Institution :
ABB Switzerland Ltd. Semicond., Lenzburg, Switzerland
Abstract :
In this paper, we demonstrate for the first time, a planar high voltage IGBT and freewheeling diode chip set with a blocking capability exceeding 8000 V. The main aim is to show that a high performance IGBT can be achieved at this voltage level by implementing the "soft-punch-through" (SPT) concept. Details of the IGBT and diode design and performance are presented. This includes, experimental results for the static and dynamic characteristics under normal and SOA conditions, detailed trade-off curves for a number of design parameters, and cosmic ray induced failure results for the IGBT and diode.
Keywords :
cosmic ray interactions; insulated gate bipolar transistors; insulated gate field effect transistors; power bipolar transistors; power semiconductor diodes; semiconductor device measurement; semiconductor device reliability; 8 kV; IGBT design; IGBT performance; SOA conditions; blocking capability; cosmic ray induced failure; design parameters; diode design; diode performance; dynamic characteristics; freewheeling diode chip set; high voltage IGBTs; high voltage diodes; planar high voltage IGBT; soft-punch-through concept; static characteristics; trade-off curves; voltage level; Bipolar transistor circuits; Conductivity; Insulated gate bipolar transistors; MOSFETs; Power system dynamics; Power systems; Semiconductor diodes; Semiconductor optical amplifiers; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016166
