Title :
10 kV power semiconductors - breakthrough for 6.9 kV medium voltage drives
Author :
Weber, A. ; Eicher, S.
Author_Institution :
ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
Requirements on semiconductor ratings and characteristics are established based on demands of voltage and current source inverters. Fundamental parameters such as blocking characteristics and safe operating area have been measured on 10 kV pin diodes and IGBTs and IGCTs for 4 kV DC link voltage to estimate the potential of these devices in the application.
Keywords :
electric drives; insulated gate bipolar transistors; invertors; p-i-n diodes; power semiconductor devices; 10 kV; 4 kV; 6.9 kV; DC link voltage; IGBTs; IGCTs; blocking characteristics; current source inverters; high voltage semiconductor; medium voltage drives; pin diodes; power semiconductors; safe operating area; semiconductor ratings; voltage source inverters; Area measurement; Conductivity; Costs; Insulated gate bipolar transistors; Inverters; Medium voltage; Power generation; Semiconductor diodes; Silicon; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016167
