Hybrid all-SiC MOS-gated bipolar transistor (MGT)

Author

Tang, Yi ; Banerjee, Sujit ; Chow, T. Paul

Author_Institution

Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2002

fDate

2002

Firstpage

53

Lastpage

56

Abstract

A MOS-gated bipolar transistor structure (called MGT), which consists of a MOSFET driving an npn bipolar junction transistor in a Darlington configuration, is experimentally demonstrated in SiC in hybrid form with a 6H-SiC lateral RESURF MOSFET driving high-voltage 4H-SiC implanted-emitter BJT. SiC MGT has several advantages over SiC IGBT, such as wider Safe Operation Area (SOA) as well as faster switching. The hybrid transistor has a forward drop of 5 V at 50 A/cm² and rise and fall times of 0.8 μs and 2.5 μs, respectively.

Keywords

power transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 0.8 mus; 2.5 mus; 5 V; Darlington configuration; MGT; MOS-gated bipolar transistor; SiC; fall times; forward drop; hybrid transistor; implanted-emitter BJT; lateral RESURF MOSFET; rise times; safe operation area; switching; Bipolar transistors; Breakdown voltage; Hybrid junctions; Insulated gate bipolar transistors; MOSFET circuits; Power electronics; Semiconductor optical amplifiers; Silicon carbide; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016169

Filename

1016169