4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V

4H-SiC BJTs with 1.05 mm² and 0.0072 mm² active areas are fabricated. Large devices show specific on-state resistance R_ON,SP of 78 mΩ-cm², common emitter current gain β of 15, and open-base blocking voltage BV_CEO > 3,200 V at room temperature. Small devices have β around 20, and R_ON,SP of 28 mΩ-cm². R_ON,SP increases with temperature while β decreases. β also decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination in the p+ implanted base contact at implant-induced defect sites.