Title :
4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V
Author :
Huang, Chih-Fang ; Cooper, James A., Jr.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
4H-SiC BJTs with 1.05 mm2 and 0.0072 mm2 active areas are fabricated. Large devices show specific on-state resistance RON,SP of 78 mΩ-cm2, common emitter current gain β of 15, and open-base blocking voltage BVCEO > 3,200 V at room temperature. Small devices have β around 20, and RON,SP of 28 mΩ-cm2. RON,SP increases with temperature while β decreases. β also decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination in the p+ implanted base contact at implant-induced defect sites.
Keywords :
electron-hole recombination; ion implantation; power bipolar transistors; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 3200 V; SiC; active areas; base contact implant; common emitter current gain; emitter finger; implant-induced defect sites; npn bipolar junction transistors; on-state resistance; open-base blocking voltage; p+ implanted base contact; recombination; Aluminum; Annealing; Argon; Fingers; Implants; MOSFETs; Silicon carbide; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016170
