Title :
5 kV 4H-SiC SEJFET with low RonS of 69mΩcm2
Author :
Asano, K. ; Sugawara, Y. ; Hayashi, T. ; Ryu, S. ; Singh, R. ; Palmour, J. ; Takayama, D.
Author_Institution :
Tech. Res. Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
A normally-off type 5.3 kV 4H-SiC JFET with low specific on-resistance, called a SEJFET (Static Expansion channel JFET), has been fabricated. By an adoption of area-efficient cell structure and a proper JTE termination (Junction Termination Extension), high performance is realized. The specific on resistance (RonS) is 69 mΩcm2 and the turn off time is 47 ns. The highest current capability is 3.3 A. In all reported FETs, the SEJFET has the best trade-off between RonS and blocking voltage (BV), which is about 1/230th lower than theoretical limit of a Si FET. Furthermore, the figure of merit (BV2/RonS) is 407MW/cm2, and this value is the highest among reported normally off SiC FETs.
Keywords :
junction gate field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 3.3 A; 47 ns; 5.3 kV; JTE termination; Junction Termination Extension; SEJFET; SiC; Static Expansion channel JFET; area-efficient cell structure; blocking voltage; current capability; figure of merit; normally-off type JFET; specific on-resistance; turn off time; Aluminum; Doping; Epitaxial layers; FETs; Fabrication; MOSFET circuits; Power semiconductor devices; Silicon carbide; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016171
