DocumentCode :
1925325
Title :
0.33/spl mu/m Millimeter Wave Inp-Channel Hemts with High F/sub T/ and F/sub MAX/
Author :
Aina, L. ; Burgess, M. ; Mattingly, M. ; O´Connor, James ; Meerschaert, A. ; Tong, M. ; Ketterson, A. ; Adesida, I.
Author_Institution :
Department of Electrical & Computer Engineering, University of Illinois
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Electron mobility; Fabrication; Frequency; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Microelectronics; Microwave devices; Millimeter wave technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664690
Filename :
664690
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1925325
