Title :
Impact of BiCMOS technology on SRAM circuit design
Author :
Fung, P. Kuen ; Tran, Hiep V. ; Scott, David B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The BiCMOS design techniques used in the design of ECL (emitter-coupled logic) megabit and 256 K BiCMOS SRAMs are discussed. The topics covered include design issues with respect to ECL-to-CMOS-level translation, sense amplifier design, I/O interface issues, and the integration of bipolar devices into high-density, but traditionally CMOS-only circuits. The superior performance that BiCMOS has over CMOS with respect to temperature insensitivity is discussed
Keywords :
BIMOS integrated circuits; VLSI; emitter-coupled logic; integrated circuit technology; integrated memory circuits; random-access storage; 1 Mbit; 256 kbit; BiCMOS design techniques; BiCMOS technology; ECL; ECL-to-CMOS-level translation; I/O interface; SRAM circuit design; design issues; emitter-coupled logic; integration of bipolar devices; performance; sense amplifier design; temperature insensitivity; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Circuit synthesis; Differential amplifiers; MOS devices; Power dissipation; Random access memory; Temperature sensors; Voltage;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-1971-6
DOI :
10.1109/ICCD.1989.63378
