Title :
120 V multi RESURF junction barrier Schottky rectifier (MR-JBS)
Author :
Kunori, S. ; Kitada, M. ; Shimizu, T. ; Oshima, K. ; Sugai, A.
Author_Institution :
R & D Center, Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan
Abstract :
In this paper, we report a 120 V multi RESURF junction barrier Schottky rectifier (MR-JBS). For the first time, we fabricated a 120 V MR-JBS with high aspect p-n junction ratio by filling trenches with single crystal Si using epitaxial growth. By balancing the charge of the p and n regions, VBR=161 V (at IR=1 mA), VF=0.69 V (at JF=200 A/cm2) and JR=3.3×10-5 A/cm2 (at VR=120 V) were obtained. Moreover, by optimizing the n-type drift region, VBR=130 V, VF=0.62 V and JR=4×10-5 A/cm2 were obtained. This VF is 0.17 V lower than conventional 120 V SBDs.
Keywords :
Schottky diodes; epitaxial growth; power semiconductor diodes; semiconductor device measurement; semiconductor device models; solid-state rectifiers; 0.62 V; 0.69 V; 1 mA; 120 V; 130 V; 161 V; MR-JBS; SBD; Si; epitaxial growth; high aspect p-n junction ratio; multi RESURF junction barrier Schottky rectifier; n-type drift region; p/n region charge balancing; simulation model; single crystal Si trench filling; DC-DC power converters; Epitaxial growth; Filling; Neodymium; Rectifiers; Schottky barriers; Schottky diodes; Silicon; Telecommunications; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016180
