750 A, 75 V MOSFET power module with sub-nH inductance

Author

Mourick, P. ; Steger, J. ; Tursky, W.

Author_Institution

Semikron Elektron. GmbH, Nuremberg, Germany

fYear

2002

fDate

2002

Firstpage

109

Lastpage

112

Abstract

In order to reduce the size and the costs of an inverter, the difference between the maximum DC voltage in that application and the blocking voltage of the transistors has to be made as low as possible. This however depends on the reduction of the inductivity between the plus and minus terminals, because this parasitic inductance causes over-voltage spikes during MOSFET turn off. This paper shows the design of a MOSFET power module with a measured inductivity of 0.83 nH. The "state of the art" value is 20 nH. This reduction could only be achieved with a radically different packaging and integration approach.

Keywords

inductance; invertors; modules; network synthesis; overvoltage; power MOSFET; power electronics; 75 V; 750 A; MOSFET power modules; MOSFET turn off; inverter cost reduction; inverter size reduction; maximum DC voltage; minus terminals; module integration strategy; module measured inductivity; module packaging; over-voltage spikes; parasitic inductance; plus terminals; sub-nH inductance; transistor blocking voltage; Bars; Bridge circuits; Costs; Inductance; Inverters; MOSFET circuits; Multichip modules; Packaging; Power MOSFET; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016183

Filename

1016183