DocumentCode :
1925503
Title :
Inp Based Inverted High Electron Mobility Transistors
Author :
Schmitz, A.E. ; Nguyen, L.D. ; Brown, A.S. ; Metzger, R.A.
Author_Institution :
Hughes Research Laboratories, Malibu, CA
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Electron devices; HEMTs; Indium phosphide; Intrusion detection; MODFETs; Physics; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664691
Filename :
664691
Link To Document :
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