• DocumentCode
    1925503
  • Title

    Inp Based Inverted High Electron Mobility Transistors

  • Author

    Schmitz, A.E. ; Nguyen, L.D. ; Brown, A.S. ; Metzger, R.A.

  • Author_Institution
    Hughes Research Laboratories, Malibu, CA
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Electron devices; HEMTs; Indium phosphide; Intrusion detection; MODFETs; Physics; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664691
  • Filename
    664691