Title :
Conductivity modulation improvement in 6.5 kV trench UMOS insulated gate bipolar transistors
Author :
Natarajan, R. ; Chow, T.P.
Author_Institution :
Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A low forward-drop insulated gate bipolar transistor with trench UMOS structure and blocking capability of 6.5 kV is described. The effect of various design parameters on conductivity modulation in UMOS IGBTs and the potential for higher switching efficiency through the adjustment of the excess carrier profile during forward conduction is analyzed. Results based on numerical simulation of the forward conduction, forward blocking, FBSOA and RBSOA characteristics of 6.5 kV UMOS and DMOS IGBTs in the stripe and circular cell-geometries are presented and compared.
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power transistors; semiconductor device models; 6.5 kV; FBSOA; RBSOA; blocking capability; circular cell-geometries; conductivity modulation improvement; design parameters; excess carrier profile; forward conduction; low forward-drop transistor; numerical simulation; stripe cell-geometries; switching efficiency; trench UMOS insulated gate bipolar transistors; Conductivity; Doping; Forward contracts; Geometry; Insulated gate bipolar transistors; Numerical simulation; Power electronics; Switching loss; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016186
