Title :
Defect-less trench filling of epitaxial Si growth by H2 annealing
Author :
Yamauchi, Shoichi ; Urakami, Yasushi ; Tuji, Nobuhiro ; Yamaguchi, Hitoshi
Author_Institution :
Res. Labs., Denso Corp., Aichi, Japan
Abstract :
A new trench filling epitaxial Si growth process is proposed for the high aspect ratio doped region. Pre-H2-annealing treatment before filling epitaxial growth realizes the prevention of the crystal defects in the filling epitaxial layer. After filling epitaxial growth, the sequential processes, i.e., HCl etching, refilling epitaxial growth and post-H2-annealing, make a trench filling. The fabricated doped region has a high aspect shape (width: 3.0 μm, depth: 32 μm, aspect ratio: 10.7), which has been investigated by the cross-sectional SCM observation.
Keywords :
elemental semiconductors; etching; power MOSFET; rapid thermal annealing; scanning probe microscopy; semiconductor growth; silicon; vapour phase epitaxial growth; 3.0 micron; 32 micron; LP-CVD; Si; annealing; aspect shape; cross-sectional SCM observation; defect-less trench filling; epitaxial growth process; etching; high aspect ratio doped region; power MOSFETs; scanning capacitance microscopy; sequential processes; Annealing; Epitaxial growth; Epitaxial layers; Etching; Filling; Fluid flow; Hydrogen; Rough surfaces; Scanning electron microscopy; Surface roughness;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016189
