Double-side IGBT phase leg architecture for reduced recovery current and turn-on loss

Author

Neilson, J.M. ; Kub, F.J. ; Hobart, K.D. ; Brandmier, K. ; Ancona, M.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2002

fDate

2002

Firstpage

141

Lastpage

144

Abstract

A double-side IGBT (DIGBT) phase leg architecture that uses the DIGBT as a substitute for a free wheeling diode to achieve reduced turn-on loss and reduced reverse recovery peak current during turn-on is described and characterized. Approximately a 50% reduction in reverse recovery peak current and an 80% reduction in recovery charge are achieved. In addition, low power dissipation (≈1 A current level) protection circuitry is described that can be incorporated into the DIGBT phase leg architecture to allow the flow of reverse current even if the gate driver circuit is disabled so that conventional high current free wheeling diodes are not required to provide protection.

Keywords

electric current; insulated gate bipolar transistors; losses; power bipolar transistors; protection; semiconductor device measurement; 1 A; DIGBT phase leg architecture; double-side IGBT phase leg architecture; free wheeling diode; gate driver circuit; power dissipation; protection circuitry; reverse current flow; reverse recovery peak current; turn-on loss; Driver circuits; Fabrication; Insulated gate bipolar transistors; Leg; Power dissipation; Protection; Semiconductor diodes; Switches; Temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016191

Filename

1016191