Title :
Dynamics of maximum junction temperature of power MOSFETs
Author :
Chung, Young S. ; Baird, Bob
Author_Institution :
SMARTMOS Technol. Center, Motorola Inc., Mesa, AZ, USA
Abstract :
It has been understood that a single pulse operation is limited by the maximum junction temperature, Tj,max. The intrinsic nature of the maximum junction temperature limit is expressed in terms of power but not of voltage. Both simulation and experimental results reveal that the maximum junction temperature is not static but dynamic, depending on the voltage. The intrinsic junction temperature mechanism can not comprehend the dynamic property of the maximum junction temperature. This paper deals with dynamic characteristics of the maximum junction temperature of power MOSFET devices in terms of operation and design aspects.
Keywords :
MOS integrated circuits; integrated circuit design; power MOSFET; power integrated circuits; thermal resistance; design aspects; dynamic characteristics; maximum junction temperature; power IC; power MOSFETs; single pulse operation; smart power; thermal resistance; Books; Laboratories; MOSFETs; Mechanical factors; Semiconductor optical amplifiers; Temperature dependence; Temperature sensors; Thermal resistance; Vehicle dynamics; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016192
