Title :
Investigations on the stability of dynamic avalanche in IGBTs
Author :
Rose, Petra ; Silber, Dieter ; Porst, Alfred ; Pfirsch, Frank
Author_Institution :
Bremen Univ., Germany
Abstract :
Simulation studies on dynamic avalanche exhibit self-extinguishing current filaments which move across the device. In spite of high current densities, there is no indication for subsequent latching. High power densities will probably result in high local transient temperatures and device failure. The benefit of prolonged channel current during turn-off is obviously due to suppression of current filaments.
Keywords :
avalanche breakdown; current density; insulated gate bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; thermal stability; IGBT dynamic avalanche stability investigations; current filament suppression; device current filament movement; device failure; device latching; dynamic avalanche simulation studies; high current densities; high power densities; local transient temperatures; self-extinguishing current filaments; turn-off prolonged channel current; Charge carrier processes; Current density; Diodes; Insulated gate bipolar transistors; Isothermal processes; Plasma temperature; Resistors; Stability; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016197
