Title :
Development of microstrip gas chambers on resistive supports
Author :
Bouclier, R. ; Million, G. ; Florent, J.J. ; Gaudaen, J. ; Ropelewski, L. ; Sauli, F. ; Shekhtman, L.
Author_Institution :
CERN, Geneva, Switzerland
Abstract :
Summary form only. Recent developments of microstrip gas chambers (MSGCs) manufactured on various semiconducting glass and plastic supports are discussed. While in all cases short-term measurements indicate a rate capability up to and above 5×105 counts/s-mm2, long-term exposure to radiation shows gain modifications, the larger the higher the resistivity of the chamber substrate, possibly due to surface charging-up. A choice of low-resistivity supports minimizes this effect. MSGCs on semiconducting glasses in the range between 109 to 1015 Ω-cm and on plastic foils, (Tedlar, Kapton, ion-implanted Kapton, and Upilex) with equivalent surface resistivities between 1011 and 1017 Ω/square have been realized. For the more conducting supports, aging phenomena seem to appear at the highest integral fluxes, more or less pronounced depending on the gas and the materials used, in particular for the electrodes
Keywords :
amplification; position sensitive particle detectors; Kapton; Tedlar; Upilex; aging; gain; ion-implanted Kapton; microstrip gas chambers; plastic foils; plastic supports; resistive supports; semiconducting glass; Aging; Conducting materials; Conductivity; Gain measurement; Glass manufacturing; Microstrip; Plastics; Semiconductivity; Semiconductor device manufacture; Substrates;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301126