Optimization of IGBT in power factor correction module for home appliance

Author

Yun, Chong Man ; Suh, Bum Suk ; Kim, Tae Hoon

Author_Institution

Fairchild Semicond., Kyunggi-Do, South Korea

fYear

2002

fDate

2002

Firstpage

181

Lastpage

184

Abstract

IGBTs in an application specific power factor correction module for home air conditioner, have been characterized in terms of the conducted and radiated EMI noise as well as static and dynamic loss. Simulation and experimental results showed that internal gate resistance and drift layer thickness should be optimized in terms of performance and EMI noises. System simulation predicted that total power consumption by IGBT, FRD and rectifier does not exceed 80 W even in worst condition; output power=3 kW, controlled output DC voltage=380 V, Vin=170 V and fs=25 kHz.

Keywords

air conditioning; domestic appliances; electromagnetic interference; insulated gate bipolar transistors; power factor correction; 170 V; 25 kHz; 3 kW; 380 V; 80 W; FRD; IGBT; air conditioner; application specific module; conducted EMI noise; controlled output DC voltage; drift layer thickness; dynamic loss; home appliance; internal gate resistance; inverter system; output power; power factor correction module; radiated EMI noise; static loss; total power consumption; Diodes; Energy consumption; Home appliances; Insulated gate bipolar transistors; Inverters; Leakage current; Packaging; Power factor correction; Rectifiers; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016201

Filename

1016201