Title :
High-Transconductance Ingaas/Inaias Sisfets
Author :
Jackson, T.N. ; Solomon, P.M. ; Tischler, M.A. ; Pettit, G.D. ; Canora, F.J. ; DeGelormo, J.F. ; Bucchignano, J.J. ; Wind, S.J.
Author_Institution :
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
Keywords :
Annealing; Electrons; Fabrication; Indium gallium arsenide; Temperature; Transconductance; Voltage;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664693
