High-Transconductance Ingaas/Inaias Sisfets

Author

Jackson, T.N. ; Solomon, P.M. ; Tischler, M.A. ; Pettit, G.D. ; Canora, F.J. ; DeGelormo, J.F. ; Bucchignano, J.J. ; Wind, S.J.

Author_Institution

IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY

fYear

1991

fDate

17-19 June 1991

Keywords

Annealing; Electrons; Fabrication; Indium gallium arsenide; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1991. 49th Annual

Conference_Location

Boulder, CO, USA

Print_ISBN

0-87942-647-0

Type

DOI

10.1109/DRC.1991.664693

Filename

664693

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