DocumentCode
1925941
Title
Switching properties of 2 kV SiC-SIT
Author
Onose, Hidekatsu ; Watanabe, Atsuo ; Someya, T. Omoyuki ; Kobayashi, Yoshiyuki
Author_Institution
Research Lab., Hitachi Ltd., Japan
fYear
2002
fDate
2002
Firstpage
189
Lastpage
192
Abstract
A completely vertical channel type static induction transistor with the novel gate structure is fabricated. Highest blocking voltage of 2000 V in the case of vertical channel type silicon carbide SITs and low on-resistance of 70 mΩ·cm2 are realized. Turn-off characteristics are investigated and very fast turn-off time of 20 ns at high temperature of 200°C under dc voltage of 1000 V is successfully demonstrated. Large current turned-off properties are also demonstrated by a parallel connection of two small SITs.
Keywords
power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 1000 V; 2 kV; 20 ns; 200 degC; SIT; SiC; blocking voltage; completely vertical channel type transistor; gate structure; lateral diffusion; parallel connection; specific on-resistance; static induction transistor; turn-off characteristics; turn-off time; Epitaxial growth; FETs; Ion implantation; Low voltage; MOSFETs; Power semiconductor switches; Research and development; Silicon carbide; Temperature; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016203
Filename
1016203
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