Title :
The concave junction: an attractive topology to design specific junction terminations
Author :
Hakim, H. ; Sanchez, J.-L. ; Laur, Jean-Pierre ; Austin, P. ; Breil, M.
Author_Institution :
LAAS-CNRS, Toulouse, France
Abstract :
In this paper a new junction topology, the concave junction, and its application in specific junction terminations are presented. We demonstrate, by solving the ionization integrals in the non-punchthrough case, that the breakdown voltage of this type of junction can be higher than that of the infinite plane junction. Based on numerical simulations, we investigate the use of this property to design peripheral terminations for vertical devices with very deep trenches.
Keywords :
integral equations; ionisation; numerical analysis; p-n junctions; power semiconductor devices; semiconductor device breakdown; semiconductor device models; topology; breakdown voltage; concave junction topology; deep trench vertical devices; infinite plane junction; junction termination design; nonpunchthrough case ionization integrals; numerical simulations; peripheral termination design; Capacitors; Doping; Ionization; Numerical simulation; Poisson equations; Protection; Silicon; Space charge; Topology; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016204
