DocumentCode
1925969
Title
The concave junction: an attractive topology to design specific junction terminations
Author
Hakim, H. ; Sanchez, J.-L. ; Laur, Jean-Pierre ; Austin, P. ; Breil, M.
Author_Institution
LAAS-CNRS, Toulouse, France
fYear
2002
fDate
2002
Firstpage
193
Lastpage
196
Abstract
In this paper a new junction topology, the concave junction, and its application in specific junction terminations are presented. We demonstrate, by solving the ionization integrals in the non-punchthrough case, that the breakdown voltage of this type of junction can be higher than that of the infinite plane junction. Based on numerical simulations, we investigate the use of this property to design peripheral terminations for vertical devices with very deep trenches.
Keywords
integral equations; ionisation; numerical analysis; p-n junctions; power semiconductor devices; semiconductor device breakdown; semiconductor device models; topology; breakdown voltage; concave junction topology; deep trench vertical devices; infinite plane junction; junction termination design; nonpunchthrough case ionization integrals; numerical simulations; peripheral termination design; Capacitors; Doping; Ionization; Numerical simulation; Poisson equations; Protection; Silicon; Space charge; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016204
Filename
1016204
Link To Document