DocumentCode
1925971
Title
Rad-tolerant flight VLSI from commercial foundries
Author
Gambes, J.W. ; Maki, Gary K.
Author_Institution
Microelectron. Res. Center, New Mexico Univ., Albuquerque, NM, USA
Volume
3
fYear
1996
fDate
18-21 Aug 1996
Firstpage
1227
Abstract
This paper reviews techniques which have been used to protect CMOS circuits from the deleterious effects of the natural space radiation environment. Three custom flight VLSI processors have been designed and fabricated at commercial foundries. A program has been initiated to provide this radiation-tolerant VLSI technology to designers of Application Specific Integrated Circuits
Keywords
CMOS digital integrated circuits; VLSI; application specific integrated circuits; integrated circuit design; integrated circuit reliability; leakage currents; protection; radiation effects; radiation hardening (electronics); space vehicle electronics; ASIC; CMOS circuit protection; commercial foundries; custom flight VLSI processors; natural space radiation environment; rad-tolerant flight VLSI; radiation-tolerant VLSI technology; Circuits; Electron traps; Foundries; Interface states; Ionizing radiation; Microelectronics; Radiation hardening; Satellites; Space technology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.593127
Filename
593127
Link To Document