DocumentCode
1925985
Title
The MOS controlled super junction transistor (SJBT): a new, highly efficient, high power semiconductor device for medium to high voltage applications
Author
Bauer, Friedhelm
Author_Institution
Corporate Res., ABB Switzerland Ltd., Baden-Dattwil, Switzerland
fYear
2002
fDate
2002
Firstpage
197
Lastpage
200
Abstract
The paper presents a new MOS controlled silicon power device with columnar super junction structures. The super junction bipolar transistor (SJBT) is an extension of the super junction MOSFET principle: due to it´s p-emitter at the anode the device is bipolar in nature albeit with substantially different characteristics as compared to an IGBT. It´s electrical performance rivals advanced trench IGBTs.
Keywords
doping profiles; elemental semiconductors; power bipolar transistors; semiconductor device models; silicon; MOS controlled super junction transistor; SJBT; columnar super junction structures; electrical performance; high power semiconductor device; high voltage applications; medium voltage applications; p-emitter; Anodes; Bipolar transistors; Breakdown voltage; Charge carrier density; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Power MOSFET; Silicon; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016205
Filename
1016205
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