Title :
Very low RON measured on 4H-SiC accu-MOSFET high power device
Author :
Nallet, F. ; Godignon, P. ; Planson, D. ; Raynaud, C. ; Chante, J.P.
Author_Institution :
Centre de Genie Electrique de Lyon (CEGELY), Villeurbanne, France
Abstract :
This paper describes the I-V characteristics obtained from a 4H-SiC current limiting device. Some specific aspects of the specific on-resistance are discussed in simulation with the DESSIS ISE software. The device behavior places it in the field of the best implanted channel MOSFET (IC-MOSFET) obtained in the literature. The best on-resistance measured is 13 mΩcm2 and the saturation current density reaches 900 Acm-2.
Keywords :
current density; current limiters; doping profiles; electric resistance; power MOSFET; semiconductor device measurement; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC accu-MOSFET high power device; 4H-SiC current limiting device; DESSIS ISE software simulation; I-V characteristics; IC-MOSFET; SiC; device behavior; implanted channel MOSFET; saturation current density; specific on-resistance; Bidirectional control; Current density; Current limiters; Diodes; Doping; Power MOSFET; Power measurement; Protection; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016208
