A 3V to 6V in, 6A out synchronous buck PWM integrated FET switcher design uses state-of-art power IC technology

Author

Grant, D. ; Briggs, D. ; Daniels, D. ; Efland, T. ; King, B. ; Ramani, R. ; Skelton, D. ; Tsai, C.Y. ; Tucker, J. ; Miftakhutdinov, R. ; Martinez, R.

Author_Institution

Power Manage. Products, Texas Instrum. Inc., Dallas, TX, USA

fYear

2002

fDate

2002

Firstpage

213

Lastpage

216

Abstract

A 3V to 6V input, 6A output synchronous buck PWM switcher with integrated FETs; TI code name SWIFT™ has been fabricated using a combination of past reported power IC technology. In this IC we extended a production 0.72μm technology with enhanced features and then combined mixed circuit design with integrated thin-gate oxide, planar, very-thin-resurf VTR LDMOS FETs. The Power IC uses plated CuNiPd top metal for low resistance busing and bonding over active area and is packaged in a thin line 28 pin TSSOP package having a POWERPAD™. The technology combination yields a state-of-art performance power IC. The device is capable of 95% efficiency and is excellent for point-of-load applications such as DSP solutions as well as high density distributed power systems. The key to high efficiency in this product is dual low Ron=30 mΩ fets, low gate charge losses, and low reverse recovery losses during power FET switching.

Keywords

DC-DC power convertors; MOSFET; PWM power convertors; integrated circuit packaging; losses; mixed analogue-digital integrated circuits; 0.72 micron; 3 to 6 V; 30 mohm; 6 A; 95 percent; POWERPAD; SWIFT; TSSOP package; gate charge losses; high density distributed power systems; integrated FET switcher design; low resistance busing; mixed mode circuit design; point-of-load applications; reverse recovery losses; state-of-art power IC technology; synchronous buck PWM; very-thin-resurf VTR LDMOS FETs; Bonding; Circuit synthesis; FETs; Integrated circuit packaging; Integrated circuit technology; Integrated circuit yield; Power integrated circuits; Production; Pulse width modulation; Video recording;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016209

Filename

1016209