Power performance optimization of a new smart power IC technology targeted for 42V automotive electrical system and high-power applications

Author

Chung, Young S. ; Zuo, Jiangkui ; Macary, Veronique ; Min, Won-Gi ; Huber, John ; Yang, Hongning ; Baird, Bob

Author_Institution

SMARTMOS Technol. Center/Digital DNA Lab., Motorola Inc., Mesa, AZ, USA

fYear

2002

fDate

2002

Firstpage

221

Lastpage

224

Abstract

High energy implantation becomes increasingly attractive for CMOS and BiCMOS technologies due to significant benefits in performance and cost. This paper reports the electrical and thermal performance of the power devices in a new cost-effective smart power technology based on the high energy implantation process. characteristics in safe operating area and transient power capability of the power devices are investigated in terms of process and geometry optimizations, compared to the conventional implantation technology.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; automotive electronics; circuit optimisation; ion implantation; power integrated circuits; 42 V; BiCMOS technologies; CMOS technologies; automotive electrical system; electrical performance; geometry optimizations; high energy implantation; high-power applications; power performance optimization; process optimizations; safe operating area; smart power IC technology; thermal performance; transient power capability; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Geometry; Isolation technology; MOSFETs; Optimization; Power integrated circuits; Power system transients; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016211

Filename

1016211